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| BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO-18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his system. Due to its high precision flat glass window and its accurate chip alignment, this device is recommended for ambitious applications in the optical data transmission domain. Features D Extra fast response times at low operating voltages 94 8478 D D D D D D D D D Exact central chip alignment Chip insulated Shielded construction Hermetically sealed TO-18 case Flat optical window Wide angle of half sensitivity = 55 Radiant sensitive area A=0.25mm2 Suitable for visible and near infrared radiation Suitable for coupling with 50 mm gradient index fiber Applications Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs emitters. Detector for optical communication, e.g. for optical fiber transmission systems with only 5 V power supply. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 285 125 -55...+125 260 350 Unit V mW C C C K/W x 25 C t x5s Document Number 81533 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BPW97 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Dark Resistance Serial Resistance Reverse Light Current Test Conditions IF = 50 mA IR = 100 mA, E = 0 VR = 50 V, E = 0 VR = 50 V, f = 1 MHz, E = 0 VR = 10m V, E = 0, f = 0 VR = 50 V, f = 1 MHz Ee = 1 mW/cm2, l = 870 nm, VR = 50 V Ee = 1 mW/cm2, l = 950 nm, VR = 50 V VR = 50 V, l = 870 nm VR = 5 V, l = 870 nm VR = 5 V, l = 950 nm Symbol VF V(BR) Iro CD RD RS Ira Ira TKIra s(l) s(l) Min 60 1 1.7 5 180 1.3 0.9 0.2 0.50 0.35 55 810 560...960 80 3.6x10-14 1.4x1012 1.2 1.2 0.6 0.6 1 5 Typ 0.9 Max 1.2 Unit V V nA pF GW 1.0 W mA mA Temp. Coefficient of Ira Absolute Spectral Sensitivity y Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency l = 850 nm Noise Equivalent Power VR = 50 V, l = 870 nm Detectivity VR = 50 V, l = 870 nm Rise Time Fall Time Rise Time Fall Time Cut-Off Frequency lp l0.5 h tr tf tr tf fc NEP D* l = 780 nm l = 780 nm l = 820 nm VR = 3.8 V, RL = 50 W, VR = 3.8 V, RL = 50 W, VR = 50 V, RL = 50 W, VR = 50 V, RL = 50 W, %/K A/W A/W deg nm nm % W/ Hz cmHz/ W ns ns ns ns GHz l = 820 nm l = 820 nm www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 81533 Rev. 2, 20-May-99 BPW97 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 VR=50V 103 Ira - Reverse Light Current ( m A ) I ro - Reverse Dark Current ( nA ) 10 1 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 102 0.1 0.1 mW/cm2 101 l=950nm 0.01 0.1 1 10 100 VR - Reverse Voltage ( V ) 100 20 94 8445 40 60 80 100 120 94 8448 Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature I ra rel - Relative Reverse Light Current 1.4 1.3 1.2 1.1 1.0 0.9 0.8 20 94 8446 Figure 4. Reverse Light Current vs. Reverse Voltage 8 CD - Diode Capacitance ( pF ) l=870nm VR=50V 6 E=0 f=1MHz 4 2 0 40 60 80 100 94 8449 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature 10 Ira - Reverse Light Current ( m A ) Figure 5. Diode Capacitance vs. Reverse Voltage 10-10 f=1000MHz 500MHz 10-11 100MHz 10-12 10MHz 10-13 1 0.1 l=950nm 0.01 0.01 0.1 1 10 VR=50V NEP - Noise Equivalent Power ( W / Hz ) 10-14 102 l=870nm 103 104 105 106 f;B=1 1MHz 107 108 94 8447 Ee - Irradiance ( mW / cm2 ) 94 8450 RL - Load Resistance ( W ) Figure 3. Reverse Light Current vs. Irradiance Figure 6. Noise Equivalent Power vs. Load Resistance Document Number 81533 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BPW97 Vishay Telefunken S ( l, )rel - Relative Sensitivity ( dB ) 3 S rel - Relative Sensitivity 2 1 0 -1 15V -2 -3 1 94 8451 0 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 VR=50V 10 100 1000 94 8453 0.6 0.4 0.2 0 0.2 0.4 0.6 f - Frequency ( MHz ) Figure 7. Relative Sensitivity vs. Frequency Figure 9. Relative Radiant Sensitivity vs. Angular Displacement S ( l ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 350 550 750 950 1150 94 8452 l - Wavelength ( nm ) Figure 8. Relative Spectral Sensitivity vs. Wavelength www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 81533 Rev. 2, 20-May-99 BPW97 Vishay Telefunken Dimensions in mm 96 12182 Document Number 81533 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) BPW97 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 81533 Rev. 2, 20-May-99 |
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